Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k/SiO_2 interface

摘要

We have examined an origin of the flatband voltage (V_(FB)) shift in metal-oxide-semiconductor capacitors by employing bilayer high-k: gate dielectrics consisting of HfO_2 and Al_2O_3 on the interfacial SiO_2 layer. We found that the high-k/SiO_2 interfac