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Analysis of Flatband Voltage for MOS Devices Using High-K Dielectric Materials

机译：使用高K介电材料的MOS器件的平带电压分析

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Maity N.P.; Kumar Atul; Maity Reshmi; Baishya S.;
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2. Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k/SiO_2 interface [J] . Kunihiko lwamoto, Yuuichi Kamimuta, Arito Ogawa, Applied Physicsletters . 2008,第13期

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3. Thickness and material dependence of capping layers on flatband voltage (V_(FB)) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications [J] . Changhwan Choi Microelectronic Engineering . 2012,第Jana期

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4. Analysis of Flatband Voltage for MOS Devices using High-K Dielectric Materials [C] . N. P. Maity, Atul Kumar, Reshmi Maity International Conference on Advancess in Manufacturing and Materials Engineering . 2014

机译：采用高k介电材料的MOS器件的平带电压分析
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7. Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Material : Physics and technology of high-k gate dielectrics 5 [O] . Lopes J. M. J., Roeckerath M., Schlom D. G., 2007

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Analysis of Flatband Voltage for MOS Devices Using High-K Dielectric Materials

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