Dynamic bias temperature instability-like behaviors under Fowler-Nordheim program/erase stress in nanoscale silicon-oxide-nitride-oxide-silicon memories

摘要

Bias temperature-dependent characteristics of nanoscale silicon-oxide-nitride-oxide-silicon memories are investigated under program/erase (P/E) Fowler-Nordheim (FN) stresses. In the erased cell, FN stress time evolution is found to be a similar physical p