Electronic states in arsenic-decapped MnAs (1100) films grown on GaAs(001): A photoemission spectroscopy study

摘要

We examine the arsenic bonding in the near-surface region of initially arsenic-capped MnAs(1100) films grown on GaAs(001), as it evolves upon arsenic decapping. Line-shape analyses of high-resolution As 3d photoelectron emission spectra recorded at room temperature (RT) allow us to identify electronically distinct As-bonding states associated to bulk MnAs phases, bulk arsenic, and interfacial environments. Stable MnAs phases appear to be affected by the presence of a thin arsenic coating, an effect that could be advantageously used to enhance the ferromagnetic properties of MnAs films around RT.