Surface proximity and boron concentration effects on end-of-range defect formation during nonmeit laser annealing

摘要

The effects of surface proximity and B concentration on end-of-range defect formation during nonmeit laser annealing in preamorphized silicon have been studied. These effects were analyzed by observing the activation and diffusion of an ultrashallow B implant, using Hall effect and secondary ion mass spectrometry measurements. By adjusting the preamorphizing implant and laser annealing conditions, B deactivation and diffusion were minimized, resulting in a sheet resistance of ～600 Ω/sq with a 16 nm junction depth. This is attributed to a combination of enhanced dissolution of end-of-range defects and preferential formation of B-interstitial clusters due to the surface proximity and high B concentration, respectively.