Interfacial reactions of Pt-based Schottky contacts on InGaP

摘要

We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm-thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 ℃ for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 ℃ for 10 min. Prolonging the annealing to 3 h led to formation of Ga_2Pt and GaPt_3 phases in InGaP and Schottky diodes degraded after these new phases were observed.