Arsenic δ-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy

摘要

Arsenic incorporation in HgTe/Hg_(0.05)Cd_(0.95)Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a δ-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices were characterized via high resolution x-ray diffraction, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and magnetotransport Hall measurements coupled with the quantitative mobility spectrum analysis algorithm.