机译:晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构中的高电子迁移率和低薄层电阻
Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin 150001, People's Republic of China;
Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin 150001, People's Republic of China;
National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, People's Republic of China;
National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, People's Republic of China;
National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, People's Republic of China;
Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin 150001, People's Republic of China;
机译:AlInN / AlN / GaN单通道和AlInN / AlN / GaN / AlN / GaN双通道异质结构中的电流传输机制
机译:通过等离子体辅助分子束外延在轴上生长的缩放通道N极GaN / AlN异质结构上的高电子迁移率和低薄层电阻
机译:插入在两个AlN层之间的GaN厚度对晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构的输运性能的影响
机译:晶格匹配alinn / Aln / GaN异质结构中热电子的能量松弛
机译:Gan-On-Aln作为高压互补电子设备的平台
机译:栅极长度与漏极-源极距离之比对AlGaN / AlN / GaN异质结构场效应晶体管中电子迁移率的影响
机译:AlInN / AlN / GaN单通道和AlInN / AlN / GaN / AlN / GaN双通道异质结构中的电流传输机制
机译:无掺杂GaN / alN / alGaN径向纳米线异质结构作为高电子迁移率晶体管。