Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO

摘要

In this letter, the authors performed a comprehensive study on suppression mechanism of compensation from nitrogen and carbon related complex defects in N-doped ZnO grown by metal-organic chemical vapor deposition. The chemical bonding information of donorlike substitutional complex defects, (NN)_O and (NC)_O, were restrained with low N/O ratio, leading to the conduction type conversion. High epitaxial temperature has more suppressing effect on the formation of desired acceptor N_O than that of (NC)_O, as evident by the decreasing hole concentration. Upon utilization of such suppression effect, this study provides a promising route to realize p-type ZnO.