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首页> 外文期刊>Applied Physicsletters >Epitaxial-strain effect on charge/orbital order in Pr_(0.5)Ca_(0.5)MnO_3 films
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Epitaxial-strain effect on charge/orbital order in Pr_(0.5)Ca_(0.5)MnO_3 films

机译：Pr_（0.5）Ca_（0.5）MnO_3薄膜中外延应变对电荷/轨道顺序的影响

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摘要

Effect of growth orientation on charge- and orbital-ordering (CO-OO) phenomena has been studied for Pr_(0.5)Ca_(0.5)MnO_3 epitaxial thin films fabricated on (LaAlO_3)_(0.3)-(SrAl_(0.5)Ta_(0.5)O_3)_(0.7) (LSAT) substrates by means of resistivity, synchrotron x-ray diffraction, and polarized optical microscopy measurements. CO-OO transition is observed around 220 K for a film grown on an LSAT (011) substrate [(011) film], similarly to a bulk sample, while a film grown on a (001) plane of LSAT [(001) film] shows much higher transition temperature around 300 K. The domain size of OO is approximately three times as large in the (011) film as in the (001) film. These results demonstrate that various properties of CO-OO phenomena can be controlled with the growth orientation via the epitaxial strain from the substrate.
机译：研究了在（LaAlO_3）_（0.3）-（SrAl_（0.5）Ta_（）上制备的Pr_（0.5）Ca_（0.5）MnO_3外延薄膜的生长取向对电荷和轨道有序（CO-OO）现象的影响。通过电阻率，同步加速器X射线衍射和偏振光学显微镜测量，获得0.5）O_3）_（0.7）（LSAT）衬底。对于LSAT（011）基板[（011）薄膜]上生长的薄膜，类似于散装样品，在220 K左右观察到CO-OO跃迁，而在LSAT（（001）薄膜）的（001）平面上生长的薄膜图1示出了在约300K附近更高的转变温度。（001）膜的OO的畴尺寸大约是（001）膜的三倍。这些结果表明，可以通过来自基板的外延应变，利用生长取向来控制CO-OO现象的各种性质。

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  • 来源
    《Applied Physicsletters》 |2009年第15期|152502.1-152502.3|共3页
  • 作者

    D. Okuyama; M. Nakamura; Y. Wakabayashi; H. Itoh; R. Kumai; H. Yamada; Y. Taguchi; T. Arima; M. Kawasaki; Y. Tokura;

  • 作者单位

    Cross-Correlated Materials Research Group (CMRG), ASI, RIKEN, Wako 351-0198, Japan;

    Cross-Correlated Materials Research Group (CMRG), ASI, RIKEN, Wako 351-0198, Japan;

    Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan;

    Multiferroics Project, ERATO, Japan Science and Technology Agency (JST), Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan;

    Cross-Correlated Materials Research Group (CMRG), ASI, RIKEN, Wako 351-0198, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

    Cross-Correlated Materials Research Group (CMRG), ASI, RIKEN, Wako 351-0198, Japan WPI-AIMR, Tohoku University, Sendai 980-8577, Japan;

    Cross-Correlated Materials Research Group (CMRG), ASI, RIKEN, Wako 351-0198, Japan Multiferroics Project, ERATO, Japan Science and Technology Agency (JST), Department of Applied Physics, University of Tokyo, Tokyo 113-8656, JapanrnNational Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan;

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