Nonvolatile resistive switching in spinel ZnMn_2O_4 and ilmenite ZnMnO_3

摘要

We report that spinel ZnMn_2O_4 and ilmenite ZnMnO_3 show excellent unipolar resistive switching behaviors, with ON/OFF ratios larger than 104. For both oxides, retention of more than 10 h and good endurance are achieved. Conduction of the OFF state is dominated by the space-charge-limited conduction mechanism, while the Ohmic behavior dictates the ON state, which suggests a filamentary conduction mechanism. Our study introduces two promising materials candidates for nonvolatile resistive random access memory devices, and furthermore it suggests that formation and rupture of conducting filaments are universal in certain ternary oxides even though they may possess distinct crystalline structures.