机译:GaAs量子阱中嵌入的InAs量子点的存储特性
Department of Electronic and Electrical Engineering and Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
Department of Electronic and Electrical Engineering and Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
Cavendish Laboratory, Madingley Road, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom;
机译:通过嵌入量子点来实现InAs / GaAs量子点的生长优化和GaAs隧道二极管的性能增强,以用于太阳能电池应用
机译:GaAs / In_(0.15)Ga_(0.85)As / In_xGa_(1-x)As / GaAs嵌入InAs量子点的量子阱中的发射和弹性应变研究
机译:包括嵌入AlGaAs / GaAs量子阱中的InAs量子点在内的中带太阳能电池中的饱和两步光电流产生
机译:AlGaAs / GaAs高电子迁移率晶体管在通道中嵌入InAs量子点的室温存储操作
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:消除用于制备1.3μm量子点激光器的InAs / GaAs量子点中的双峰尺寸
机译:InAs量子点嵌入的p-i-n GaAs太阳能电池中的量子点诱导的光跃迁增强