Softening of the tunneling gap in modulation-doped GaAs/AIGaAs asymmetric coupled double quantum wells in magnetic fields

摘要

Magnetophotoluminescence emissions were measured from modulation doped GaAs/AIGaAs asymmetric double quantum wells, wherein a thin barrier (25 A) was sandwiched between a single quantum well (SQW) and a single heterojuction (SHJ). In the SQW, Landau level mixing is observed at the quantum Hall states. At v < 2, the lowest Landau level transition undergoes an exciton transition. For the SHJ region, the free carrier transitions become excitonic at the crossing point of the GaAs free exciton and the tunneling band gap shows a marked softening. An exciton-exciton interaction is shown to be responsible for the behavior of the subband energy levels in magnetic fields.