首页> 外文期刊>Applied Physicsletters >Electronic structure and vacancy formation of Li_3N
【24h】

Electronic structure and vacancy formation of Li_3N

机译:Li_3N的电子结构和空位形成

获取原文
获取原文并翻译 | 示例
       

摘要

The electronic structure and vacancy formation of Li_3N were studied using first principles methods. We found Li_3N exhibits strong ionic character with slight covalent bonding between N and Li. The Li vacancy formation energy decreases with an increase in nitrogen partial pressure, while the N vacancy formation energy increases with increasing nitrogen partial pressure. The Li(2) site vacancy is found to have the lowest formation energy under nitrogen-rich conditions. Formation of V_(Li(2))~-brings about delocalization of valence electrons, and reduces the band gap by 0.2 eV. These results suggest potential ways to enhance vacancy concentration in Li_3N for higher ionic conductivity.
机译:使用第一性原理研究了Li_3N的电子结构和空位形成。我们发现Li_3N表现出强大的离子特性,在N和Li之间具有轻微的共价键结合。 Li空位形成能随着氮分压的增加而降低,而N空位形成能随氮分压的增加而增加。 Li(2)网站空缺被发现在富氮条件下具有最低的形成能。 V_(Li(2))〜的形成引起价电子的离域,并将带隙减小0.2 eV。这些结果表明了提高Li_3N中空位浓度以实现更高的离子电导率的潜在方法。

著录项

  • 来源
    《Applied Physicsletters》 |2009年第17期|103-105|共3页
  • 作者单位

    Institute of High Performance Computing, 1 Fusionopolis Way, No. 16-16 Connexis, Singapore 138632, Singapore School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;

    School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;

    School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;

    Institute of High Performance Computing, 1 Fusionopolis Way, No. 16-16 Connexis, Singapore 138632, Singapore School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:19:34

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号