Midinfrared GalnSb/AIGalnSb quantum well laser diodes operating above 200 K

摘要

Electroluminescence from GalnSb/AIGalnSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ～3.3 μm at 200 K for the 1.1% structure.