Photoelectric Properties Of Bi_2o_3/gase Heterojunctions

摘要

Photoelectrical characteristics and photoluminescence of n-Bi_2O_3/p-GaSe structures have been investigated. They show photosensitivity in the photon energy range of 1.85-3.10 eV. During thermal treatment of the heterojunction, Bi and O atoms diffuse into the GaSe layer, forming two impurity levels located at 0.101 and 0.429 eV above the valence-band top of GaSe.