Electrical signatures of ferromagnetism in epitaxial FeSi_2 nanowires

摘要

We perform electrical characterization of epitaxial FeSi_2 nanowires (NWs) realized by reactive epitaxy, Typical resistance values exceed 100 kΩ, a high value that is attributed to the combined influence of interfacial scattering and process-related damage. Negative magnetoresistance due to weak localization, as well as hysteresis and anisotropic magnetoresistance, are also observed at low temperatures, confirming the ferromagnetic nature of these NWs.