Structural and electrical properties of MBE grown Mn doped β-FeSi_2 epitaxial film

摘要

In order to explore an effective doping technique for β-FeSi_2 film and to study the resulting doping behaviours, Mn was intentionally doped into β-FeSi_2 epitaxial films grown on Si (111) by employing a two-stage continuous MBE growth.