Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction

摘要

The p-type conduction in Mg-doped InN film is identified by an anomalous Hall mobility kink observed at ～600 K in temperature-dependent Hall-effect measurements. The good agreement between experimental results and ensemble Monte Carlo simulation confirms the p-type bulk conduction under the surface electron accumulation layer. Furthermore, it is found that there is an exponential relationship between the hole concentration in the p-type bulk layer and the reciprocal kink temperature, which provides an effective way to evaluate the hole concentration in Mg-doped InN bulk layer through Hall-effect measurements.