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Effects of applied electrical field on electronic structures in LaNiO_3 conductive metallic oxide film: An optical spectroscopic study

机译:施加电场对LaNiO_3导电金属氧化物膜中电子结构的影响:光学光谱研究

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摘要

The reflectance spectra of LaNiO_3 film on silicon have been investigated in the wavelength range of 190-2650 nm (0.47-6.5 eV) under different external direct-current voltage. The Drude-Lorentz dispersion model is used to extract the optical function. The O 2p to Ni 3d electronic transition can be uniquely assigned to the energy of about 1.96 eV and decreases with decreasing applied voltage. The discrepancy from the real part of dielectric function with the applied voltage has a strong spectral dependence. The optical conductivity variation under different external voltage indicates that the electrical field can induce the modification of the carrier transport.
机译:在不同的外部直流电压下,研究了LaNiO_3薄膜在硅上的反射光谱,其波长范围为190-2650 nm(0.47-6.5 eV)。 Drude-Lorentz色散模型用于提取光学函数。 O 2p到Ni 3d的电子跃迁可以唯一地分配给约1.96 eV的能量,并随着施加电压的降低而降低。介电函数的实部与施加电压的差异具有很强的光谱依赖性。在不同外部电压下的光导率变化表明,电场可以引起载流子传输的改变。

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  • 来源
    《Applied Physics Letters》 |2010年第21期|p.211904.1-211904.3|共3页
  • 作者单位

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People's Republic of China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People's Republic of China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People's Republic of China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People's Republic of China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People's Republic of China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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