Investigation of high frequency performance limit of graphene field effect transistors

摘要

Extremely high field effect mobility together with the high surface coverage makes graphene a promising material for high frequency electronics application. We investigate the intrinsic high frequency performance limit of graphene field effect transistors limited by the charge impurity scattering. The output and transfer characteristics of graphene field effect transistors together with the high frequency performance are characterized as a function of impurity concentration and dielectric constant of the gate insulator. Our results reveal that graphene transistors could provide power gain at radio frequency band.