Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy

摘要

In this letter, we show a method to extract valuable information about electronic traps from inelastic electron tunneling spectroscopy (IETS) obtained on a metal-oxide-semiconductor gate stack with ultrathin gate dielectrics. The trap information extracted from the IETS spectrum includes its location, spatial distribution, and energy distribution.