机译:基于(100)硅晶片的n沟道晶体管中与沟道取向无关的电子迁移率物理及其实验验证
School of Electrical and Electronic Engineering, Division of Microelectronics, Nanyang Technological University, Block S2.I, Nanyang Avenue, Singapore 639798;
School of Electrical and Electronic Engineering, Division of Microelectronics, Nanyang Technological University, Block S2.I, Nanyang Avenue, Singapore 639798;
School of Electrical and Electronic Engineering, Division of Microelectronics, Nanyang Technological University, Block S2.I, Nanyang Avenue, Singapore 639798;
GLOBALFOUNDRIES SINGAPORE Pte Ltd., 60 Woodlands Industrial Park D St. 2, Singapore 738406;
rnGLOBALFOUNDRIES SINGAPORE Pte Ltd., 60 Woodlands Industrial Park D St. 2, Singapore 738406;
机译:具有直接对准键合的自对准镍基金属源极/漏极的InGaAs n沟道和Ge p沟道金属氧化物半导体场效应晶体管的Ⅲ-V/ Ge高迁移率沟道集成
机译:建模硅器件中施加的应力和晶圆取向的影响:从长通道迁移率物理到短通道性能
机译:在n沟道金属氧化物半导体场效应晶体管的硅碳源漏结构中,应变诱发效应的接近性提高了电子迁移率
机译:高迁移率N沟道和P沟道纳米晶硅薄膜晶体管
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:基于再生和注入方法的N沟道GaN金属氧化物半导体场效应晶体管的制作和评估
机译:基于p沟道有机和n沟道金属氧化物晶体管的混合互补电路,载流子迁移率高达10 cm2 / Vs