C-band electromodulation in silicon-germanium ring and linear devices

摘要

We report C-band electromodulation in waveguide-integrated silicon-germanium (SiGe) ring and linear devices. With a 7 V peak-to-peak, 5 MHz sinusoidal input, a waveguide absorption change of 14.9 cm~(-1) for the linear modulator, and 3.26 cm~(-1) for the ring were calculated, corresponding to respective modulation depths of 30% and 0.7%. A 2.6 × 10~(-5) ring index change was also noted using a technique capable of resolving minute electrorefraction, even with simultaneous electroabsorption and background attenuation. Our results deliver a proof-of-concept for SiGe field-effect devices using optical interference, which may be suitable for high speed and low power optical switches.