Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

摘要

We study differential carrier lifetimes in InGaN light-emitting diodes (LEDs) of varying wavelengths. Increase in wavelength is correlated with an increase in lifetime, due to the impact of the polarization fields on carrier overlap. This effect explains the early onset of droop in longer-wavelength LEDs.