Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy

摘要

A high-quality as-grown PbSe film with a record low threading dislocation density of 9×10~5 cm~(-2) on patterned Si(111) substrate has been obtained using molecular beam epitaxy. The mechanisms leading to the remarkable reduction in threading dislocation density are analyzed. Based on the analysis, further reduction in dislocation density is anticipated. Materials with such low dislocation density should significantly improve the Si-based IV-VI group device performance.