Application of nanoimprinting technology to organic field-effect transistors

摘要

The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm~2/V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.