Application of nanoimprinting technology to organic field-effect transistors

摘要

The charge carrier transport efficiency and issues of patterning in organic semiconductors limit thenpotential range of microelectronic and optoelectronic applications of organic devices in nanoscale.nWe demonstrate high-performance organic field-effect transistors u0001OFETsu0002 with a mobility ofnapproximately 2.5 cm2n/V s using nanogroove gate-dielectrics formed by nanoimprinting. Thenpreferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobilitynanisotropic ratio u0001above 220u0002, providing a built-in autopattern organic semiconductor function withnnanoscale resolution. This nanostructure embedded device has great potential for use in thenmanufacture and lithography-free patterning of organic semiconductor films in integratedncircuits. © 2010 American Institute of Physics. u0003doi:10.1063/1.3328100