Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

摘要

Resistive-switching memory (RRAM) is attracting a considerable interest for the development of high-density nonvolatile memories. However, several scaling and reliability issues still affect the development path of RRAM. This work addresses random telegraph-signal noise (RTN) of the RRAM current, potentially affecting the memory stability. We show a clear resistance dependence of the RTN amplitude, and we propose a physical model describing the interaction of the localized current with a fluctuating defect. By estimating the diameter of the conductive filament, the model quantitatively accounts for the observed RTN amplitude, thus allowing for an analytical prediction of state stability in RRAMs.