机译:通过薄膜上形成纳米线而生长的单个单晶铋纳米线中的Shubnikov-de Haas振荡
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Republic of Korea Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208-3108, USA;
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Republic of Korea;
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Republic of Korea;
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Republic of Korea;
机译:量子尺寸对直径100 nm单晶铋纳米线中Shubnikov-de Haas振荡的影响
机译:量子尺寸对直径100nm单晶铋纳米线中Shubnikov-de Haas振荡的影响
机译:直接观察通过薄膜上形成纳米线而生长的单个单晶铋纳米线的半金属到半导体的过渡
机译:通过薄膜形成高效率热电器件的纳米线直接生长碲化铋纳米线
机译:磁控溅射生长的氧化锌和氧化铋纳米线的合成与表征。
机译:通过膜上形成纳米线的纳米线合成中结构依赖的生长控制
机译:通过膜上形成纳米线的纳米线合成中结构依赖的生长控制
机译:压缩应变InxGa1-xsb量子阱中shubnikov-de Haas振荡和孔有效质量测量的研究