机译:硅化凹陷的源极/漏极Si ^ Gex结构后沟道应变演变的表征
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea;
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea;
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea;
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea;
Department of Advanced Materials Science and Engineering, Sungkyunkwan University,Suwon 440-746, South Korea;
机译:通过干式氧化源/漏Si_(1-x)Ge_x结构的干氧化来实现高沟道应变
机译:凹陷的沟道和/或掩埋的源极/漏极结构,用于提高具有高k栅极电介质的肖特基势垒源极/漏极晶体管的性能
机译:Si_(1-x)C_x结构的通道应变测量:栅极长度,源极/漏极长度和源极/漏极高程的影响
机译:通过修改比例因子,凹陷的源/漏Si1-xCx结构的沟道应变演化
机译:用于深亚微米技术的非升高和升高的源极/漏极p沟道MOSFET的设计,制造和表征
机译:平面应变张力和简单剪切过程中IF-Steel和AA6016微观组织演变的表征
机译:通过SIN接触蚀刻静止层和凹陷的SiGE源和排水管在单轴紧张的晶体管中添加应变
机译:si1-x Gex / si异质结中局部应变变化的测量