Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

J. R. Reboul; L. Cerutti; J. B. Rodriguez; P. Grech; E. Tournie

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Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

机译：Si上生长的基于GaSb的激光二极管在室温以上的连续波操作

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We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near 2 μm up to 35 ℃ with several mW/facet output powers, limited by our experimental setup. Our results open the way to direct monolithic III-V/Si integration.

机译：我们研究了外延生长在Si衬底上的经过特殊设计的基于GaSb的激光二极管。我们演示了在高达35 m的温度下发射2μm的激光二极管的连续波操作，并具有几个mW / facet的输出功率，这受我们的实验设置限制。我们的结果为直接进行单片III-V / Si集成开辟了道路。

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来源
《Applied Physics Letters》 |2011年第12期|p.121113.1-121113.3|共3页
作者
J. R. Reboul; L. Cerutti; J. B. Rodriguez; P. Grech; E. Tournie;
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作者单位

Institut d'Electronique du Sud-UMR 5214 CNRS, Universite Montpellier 2, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

Institut d'Electronique du Sud-UMR 5214 CNRS, Universite Montpellier 2, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

Institut d'Electronique du Sud-UMR 5214 CNRS, Universite Montpellier 2, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

Institut d'Electronique du Sud-UMR 5214 CNRS, Universite Montpellier 2, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

Institut d'Electronique du Sud-UMR 5214 CNRS, Universite Montpellier 2, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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入库时间 2022-08-18 03:18:11

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1. Room temperature operated 3.1 μm type-Ⅰ GaSb-based diode lasers with 80 mW continuous-wave output power [J] . L. Shterengas, G. Belenky, G. Kipshidze, Applied Physicsletters . 2008,第17期

机译：室温操作的3.1μmⅠ型GaSb基二极管激光器，具有80 mW连续波输出功率
2. Room-Temperature Continuous-Wave Operation of GaN-Based Laser Diodes Grown by Raised-Pressure Metalorganic Chemical Vapor Deposition [J] . YANASHIMA KATSUNORI, HASHIMOTO SHIGEKI, HINO TOMONORI, Journal of Electronic Materials . 1999,第3期

机译：升压金属有机化学气相沉积法生长的GaN基激光二极管的室温连续波操作
3. Room-Temperature Continuous-Wave Operation of GaN-Based Laser Diodes Grown by Raised-Pressure Metalorganic Chemical Vapor Deposition [J] . KATSUNORI YANASHIMA, SHIGEKI HASHIMOTO, TOMONORI HINO Journal of Electronic Materials . 1999,第3期

机译：升压金属有机化学气相沉积法生长的GaN基激光二极管的室温连续波操作
4. Modal gain, loss, and thermal resistance of a metamorphic GaSb-based laser in room-temperature continuous-wave operation at 2 μm [C] . Apiratikul Paveen, He Lei, Richardson Christopher J. K. 2011 Conference on lasers and electro-optics . 2011

机译：GaSb基变质激光器在2μm的室温连续波操作中的模态增益，损耗和热阻
5. High Power, Narrow Spectrum and Passively Mode-Locked GaSb-Based Type-I Quantum Well Cascade Diode Lasers [D] . Feng, Tao. 2018

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6. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si [O] . Yi Sun, Kun Zhou, Meixin Feng, 2018

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7. Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si [O] . J. R. Reboul, L. Cerutti, J. B. Rodriguez, 2011

机译：在Si上生长的喘气激光二极管室温的连续波操作
8. Short-Wavelength Room-Temperature Continuous-Wave Laser operation of InAlP-InGaPSuperlattices Grown by Metalorganic Chemical Vapor Deposition [R] . Chelakara, R. V., Islam, M. R., Neff, J. G., 1994

机译：金属有机化学气相沉积法生长Inalp-InGaps超晶格的短波室温连续波激光器

Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

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