Forming-free resistive switching behavior in Nd_2O_3, Dy_2O_3, and Er_2O_3 films fabricated in full room temperature

摘要

In this study, we reported the forming-free resistive switching behavior in the Ru/RE_2O_3/TaN (RE = Nd, Dy, and Er) memory devices using thin Nd_2O_3, Dy_2O_3, and Er_2O_3 films fabricated with full room temperature process. The dominant conduction mechanisms of the Ru/RE_2O_3/TaN devices in the low-resistance state and high-resistance state are Ohmic behavior. The Ru/Dy_2O_3/TaN memory device exhibited high resistance ratio, nondestructive readout, reliable data retention, and good endurance. Ru/Dy_2O_3/TaN memory device has a great potential for the application in nonvolatile resistive switching memory.