Chemical Structure Study Of Sio_2/4H-Sic (0001) Interface Transition Region By Angle-Dependent X-Ray Photoelectron Spectroscopy

摘要

The chemical structure of SiO_2/4H-SiC (0001) interface transition region is investigated using angle-dependent x-ray photoelectron spectroscopy. The relative intensities of various silicon oxycarbides (SiO_xC_y) components as a function of polar emission angle suggest that SiOC_3, SiO_2C_2, SiO_3C, and SiO_2 have different depth distributions at the interface. Then a nonabrupt four-layer structure model is proposed. And the relative intensities of various SiO_xC_y species are fitted based on the model by an electron damping scheme. The well fitted results indicate that the SiO_2/4H-SiC (0001) interface transition region can be described by a chemically nonabrupt four-layer structure model well.