Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

摘要

Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were characterized by capacitance-voltage measurements. A unique tilt target sputtering configuration was employed to produce highly homogenous nanoparticle arrays. Pt nanoparticle devices with sizes ranging from ～0.7 to 1.34 nm and particle densities of ～3.3-5.9 × 10~(12) cm~(-2) were embedded between atomic layer deposited and e-beam evaporated tunneling and blocking Al_2O_3 layers. These GaAs-based non-volatile memory devices demonstrate maximum memory windows equivalent to 6.5 V. Retention characteristics show that over 80% charged electrons were retained after 10~5 s, which is promising for device applications.