机译:GaAsP(N)/ GaP(N)量子阱基发光二极管的室温操作:掺氮的影响
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
Universite Europeenne de Bretagne, France and FOTON, UMR 6082, INSA, F-35708 Rennes, France;
机译:基于In0.5Ga0.5As / GaP自组装量子点的发光二极管的室温电致发光
机译:基于In_(0.5)Ga_(0.5)As / GaP自组装量子点的发光二极管的室温电致发光
机译:室温工作II型GaSb / GaAs量子点红外发光二极管
机译:室温工作II型GaSb / GaAs量子点红外发光二极管
机译:GaP和GaAsP上的应变平衡InGaP / InGaP多量子阱电吸收调制器。
机译:量子阱宽度对AlGaN深紫外发光二极管在不同温度下的电致发光性能的影响
机译:液氮温度下GaP发光二极管的高速光电导性