Copper oxide transistor on copper wire for e-textile

摘要

A Cu_2O-based field effect transistor was fabricated on Cu wire. Thermal oxidation of Cu forms Cu-Cu_2O core-shell structure, where the metal-semiconductor Schottky junction was used as a gate barrier with Pt Ohmic contacts for source and drain. The device was coated with polydimethylsiloxane (PDMS) to protect from contamination and demonstrated as a humidity sensor. The cylindrical structure of the Cu wire and the transistor function enable embedding of simple circuits into textile which can potentially offer smart textile for wearable computing, environmental sensing, and monitoring of human vital signs.