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Surface roughness reduction in nanocrystalline Cu thin films by electrical stressing treatment

机译:通过电应力处理降低纳米晶Cu薄膜的表面粗糙度

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摘要

Electromigration-induced surface morphological evolution of nanocrystalline Cu thin films is reported. When applying a high-density current (10~6 A/cm~2), the Cu films showed reduced surface roughness from 7.5 to 1.4 nm after electrical stressing at the temperature below 100 ℃. It is suggested that preferential surface diffusion on Cu(l11) planes leads to thinning of extruded grains in the electrically stressed Cu film, as evidenced by the weakening (111) texture of the Cu film after electrical stressing. The electrical stressing process shall help reduce roughness of Cu metallization after post thermal treatment.
机译:报道了电迁移诱导的纳米晶Cu薄膜的表面形态演变。当施加高密度电流(10〜6 A / cm〜2)时,在低于100℃的温度下施加电应力后,Cu膜的表面粗糙度从7.5纳米降低到1.4纳米。建议在Cu(11)平面上优先进行表面扩散会导致电应力Cu膜中的挤压晶粒变薄,这由电应力后Cu膜的(111)织构变弱所证明。电应力处理应有助于减少后热处理后Cu金属化的粗糙度。

著录项

  • 来源
    《Applied Physics Letters》 |2011年第18期|p.181902.1-181902.3|共3页
  • 作者单位

    Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;

    Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;

    Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:17:57

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