机译:通过在GaAs衬底上超高真空化学气相沉积法生长的高质量Ge薄膜
Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd.,Hsin-chu 300, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd.,Hsin-chu 300, Taiwan,Department of Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd.,Hsin-chu 300, Taiwan;
Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA;
Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd.,Hsin-chu 300, Taiwan;
Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan;
National Nano Device Laboratories, Hsin-chu 300, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd.,Hsin-chu 300, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd.,Hsin-chu 300, Taiwan;
机译:通过超高真空化学气相沉积直接在硅衬底上外延生长的富锗硅锗薄膜
机译:通过金属有机化学气相沉积在InGaAs缓冲层上生长的高质量拉伸应变n掺杂锗薄膜
机译:通过超高真空化学气相沉积法在绝缘体上硅衬底上生长的高质量部分松弛的SiGe膜
机译:通过超高真空化学沉积在In
机译:超高真空金属有机化学气相沉积和纳米级二氧化钛薄膜的原位表征。
机译:应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的(001)图案化Si衬底上生长的InP的缺陷
机译:在Gaas衬底上通过金属有机化学气相沉积生长的InGaas / InGaasp / InGap量子阱激光二极管的界面结构
机译:衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响