机译:在(110)硅基板上形成具有高锗源的硅基隧穿场效应晶体管
Department of Electrical and Computer Engineering, National University of Singapore,Singapore 119260;
Department of Electrical and Computer Engineering, National University of Singapore,Singapore 119260;
Department of Electrical and Computer Engineering, National University of Singapore,Singapore 119260;
Department of Electrical and Computer Engineering, National University of Singapore,Singapore 119260;
Department of Electrical and Computer Engineering, National University of Singapore,Singapore 119260;
Department of Electrical and Computer Engineering, National University of Singapore,Singapore 119260;
机译:隧道场效应晶体管的源工程:具有垂直硅锗/锗异质结构的高架源
机译:Si(110)衬底上带有锗源的N沟道Si隧穿场效应晶体管的温度相关I_(DS)–V_(GS)特性
机译:具有硅锗源的双栅极隧道场效应晶体管的器件设计和可扩展性
机译:在高温下运行的InAs和硅基弹道自旋场效应晶体管的特性
机译:低能电子显微镜和扫描隧道显微镜研究锗在锗(111)和锗(110)上的生长以及锗(111),锗(110)和锗(001)上的银的生长
机译:一种适用于低功率应用的新型锗环绕源栅极全能隧穿场效应晶体管
机译:基于硅锗的带间隧穿场效应晶体管的制作,表征和仿真
机译:锗场效应晶体管由高纯度基板制成