Publisher's Note: 'Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes' [Appl. Phys. Lett. 70, 2978 (1997)]

C. J. Sun; M. Zubair Anwar; Q. Chen; J. W. Yang; M. Asif Khan; M. S. Shur; A. D. Bykhovski; Z. Liliental-Weber; C. Kisielowski; M. Smith; J. Y. Lin; H. X. Jiang

首页> 外文期刊>Applied Physics Letters >Publisher's Note: 'Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes' [Appl. Phys. Lett. 70, 2978 (1997)]

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Publisher's Note: 'Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes' [Appl. Phys. Lett. 70, 2978 (1997)]

机译：出版者注：“ InGaN-GaN多量子阱发光二极管中带边激发发射的量子位移” [Appl。物理来吧70，2978（1997）]

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This article was originally published online and in print with an error in H. X. Jiang's name. The authors appears correctly above. All online versions of the article were corrected on 3 March 2011.

机译：本文最初在线发布并印刷，但H. X. Jiang的名字有误。作者正确显示在上方。本文的所有在线版本均已在2011年3月3日得到更正。

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来源
《Applied Physics Letters》 |2011年第14期|p.149901.1|共1页
作者
C. J. Sun; M. Zubair Anwar; Q. Chen; J. W. Yang; M. Asif Khan; M. S. Shur; A. D. Bykhovski; Z. Liliental-Weber; C. Kisielowski; M. Smith; J. Y. Lin; H. X. Jiang;
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作者单位

APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434, USA;

APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434, USA;

APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434, USA;

APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434, USA;

APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434, USA;

Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy,New York 12180-3590, USA;

Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903-2442, USA Institute of Physics and Technology, 194021 St Petersburg, Russia;

Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

Department of Materials Science and Mineral Engineering, University of California at Berkeley,Berkeley California 94720, USA;

Department of Physics, Kansas State University, Manhattan, Kansas 66506, USA;

Department of Physics, Kansas State University, Manhattan, Kansas 66506, USA;

Department of Physics, Kansas State University, Manhattan, Kansas 66506, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Publisher's Note: 'AIGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy' [Appl. Phys. Lett. 98, 081110 (2011)] [J] . Yitao Liao, Christos Thomidis, Chen-kai Kao, Applied Physics Letters . 2012,第2期

机译：发行人注：“通过分子束外延生长具有高内部量子效率的基于AIGaN的深紫外发光二极管” [Appl。物理来吧98，081110（2011）]
2. Publisher's Note: "Structural atomic-scale analysis of GaAs/AIGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate"[Appl. Phys. Lett. 98,193112 (2011)] [J] . J. G. Keizer, M. Jo, T. Mano, Applied Physics Letters . 2011,第13期

机译：发行人注：“通过（311）A衬底上的液滴外延生长的GaAs / AIGaAs量子线和量子点的结构原子尺度分析” [Appl。物理来吧98,193112（2011）]
3. Publisher's Note: 'Quantum key distribution using a triggered quantum dot source emitting near 1.3 μm' [Appl. Phys. Lett. 91, 161103 (2007)] [J] . P. M. Intallura, M. B. Ward, O. Z. Karimov, Applied Physics Letters . 2007,第19期

机译：发行人的注释：“使用触发的量子点源发射接近1.3μm的量子密钥进行分配” [Appl。物理来吧91，161103（2007）]
4. Hybridization of CdSe/ZnS Quantum Dots on InGaN/GaN Multiple Quantum Well Light-Emitting Diodes for Pink Light Emission [C] . Huang Chun-Yuan, Su Yan-Kuin, Chen Ying-Chih, IEEE PhotonicsGlobal@Singapore . 2008

机译：用于粉红色光发射的IngaN / GaN多量子阱发光二极管Cdse / ZnS量子点的杂交
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Hybrid Quantum Dot Light-Emitting Diodes for White Emission Using Blue Phosphorescent Organic Molecules and Red Quantum Dots [O] . Aram Moon, Jiwan Kim 2019

机译：使用蓝色磷光有机分子和红色量子点的用于白色发射的混合量子点发光二极管
7. Publisher’s Note: “Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes” Appl. Phys. Lett. 70, 2978 (1997) [O] . C. J. Sun, M. Zubair Anwar, Q. Chen, 2011

机译：出版商注意：“带边缘刺激发射的”带边缘多量子孔发光二极管的量子偏移“Appl。物理。吧。 70,2978（1997）

Publisher's Note: 'Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes' [Appl. Phys. Lett. 70, 2978 (1997)]

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