机译:垂直磁化的Ta / CoFeB / MgO导线中的电流感应有效场
Renesas Electronics Corporation, Sagamihara, Kanagawa 252-5298, Japan;
NEC Corporation, Sagamihara, Kanagawa 252-5298, Japan;
NEC Corporation, Sagamihara, Kanagawa 252-5298, Japan;
Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan;
Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan,Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication,Tohoku University, Sendai 980-8577, Japan;
NEC Corporation, Sagamihara, Kanagawa 252-5298, Japan,Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan;
Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan,Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication,Tohoku University, Sendai 980-8577, Japan;
机译:垂直磁化的Hf | CoFeB | MgO和Hf | CoFeB | TaO_x结构的电流感应自旋轨道转矩切换
机译:在测定MgO / CoFeB / TA中的电流诱导的有效领域的原位克尔和谐波测量
机译:倾斜的磁各向异性对准垂直磁化Ta / Pt / CoFeB / Pt多层膜中确定性电流感应磁化反转的影响
机译:Ta / CoFeB / MgO外延结构中无场电流感应的垂直磁化转换特性
机译:研究电流垂直于平面的磁阻(CPP-MR)和电流感应的磁化开关(CIMS)。
机译:具有高热稳定性的垂直磁化W / CoFeB / MgO薄膜中的Gilbert阻尼常数低
机译:沿硬轴施加磁场对CoFeB / MgO / CoFeB磁隧道交叉电流诱导磁化切换的影响