Thermal quenching of single localized excitons in GalnNAs layers

摘要

The authors applied the temperature-dependent microphotoluminescence to study the thermal quenching of exciton lines related to localized emission from GalnNAs. It has been observed that the dispersion of localization energy is very strong (~0-150 meV) whereas the activation energy of each individual line is the same within the experimental error (~6 meV). This suggests that the main source of sharp line features are excitons localized on deep donor(acceptor)like states. At low temperatures these states can participate in radiative recombination due to the coulomb attraction between electrons and holes whereas at higher temperatures they still trap carriers but these carriers recombine nonradiatively.