Prediction of extremely long mobile electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells

摘要

Many proposed spintronics devices require mobile electrons at room temperature with long spin lifetimes. One route to achieving this is to use quantum wells with tunable spin-orbit (SO) parameters. Research has focused on zinc-blende materials such as GaAs which do not have long spin lifetimes at room temperature. We show that wurtzite (w) materials, which possess smaller SO coupling due to being low-Z, are better suited for spintronics applications. This leads to predictions of spin lifetimes in w-AIN exceeding 2 ms at helium temperatures and, relevant to spintronic devices, spin lifetimes up to 0.5 μs at room temperature.