机译:太赫兹光学霍尔效应和中红外椭偏法测定外延石墨烯中的空穴通道电导率
Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience,University of Nebraska-Lincoln, NE, USA;
Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience,University of Nebraska-Lincoln, NE, USA;
Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience,University of Nebraska-Lincoln, NE, USA;
J.A. Woollam Co. Inc., 645 M Street, Suite 102, Lincoln, NE 68508-2243, USA;
J.A. Woollam Co. Inc., 645 M Street, Suite 102, Lincoln, NE 68508-2243, USA;
U.S. Naval Research Laboratory, Washington, DC 20375, USA;
U.S. Naval Research Laboratory, Washington, DC 20375, USA;
Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience,University of Nebraska-Lincoln, NE, USA;
机译:通过太赫兹和中红外光谱椭圆偏振法测定的p-p〜+硅同质结中的空穴扩散分布
机译:通过椭圆偏振光谱法确定外延石墨烯在3C和4H SiC多型上的真空紫外介电功能
机译:外延石墨烯中随温度变化的太赫兹光电导
机译:几层外延石墨烯的超快太赫兹动力学和宽带光导率
机译:缺陷介导的外延石墨烯的电化学加氢:向基于石墨烯的微生物燃料电池迈进。
机译:HgCdTe外延层的磁导率和太赫兹响应
机译:通过太赫兹和中红外光谱椭偏仪测定的p-p +硅同质结中的空穴扩散分布