机译:通过椭圆偏振光谱法确定外延石墨烯在3C和4H SiC多型上的真空紫外介电功能
Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience,University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA;
Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience,University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA;
Department of Physics, Chemistry, and Biology (IFM), Linkoping University, SE 581 83 Linkoping, Sweden;
Department of Physics, Chemistry, and Biology (IFM), Linkoping University, SE 581 83 Linkoping, Sweden;
Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience,University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA;
机译:用椭圆偏振光谱法测量3C,4H和6H碳化硅的红外至真空紫外光学特性
机译:椭圆偏振光谱法测定SrTiO3和NdGaO3晶体的紫外真空紫外光学功能
机译:3C-SiC(111)Si和C面上外延石墨烯的厚度和电子性能的大面积微焦点椭圆偏光光谱图
机译:CVD石墨烯的像差校正显微镜和外延石墨烯和CVD石墨烯的光谱椭圆仪用于比较介电功能
机译:3C-SiC / Si上Ni辅助低温形成外延石墨烯的原位SR-XPS观察
机译:通过椭圆偏振光谱法确定外延石墨烯在3C和4H SiC多型上的真空紫外介电功能