机译:InAs / AllnAs量子破折号的室温横向极化极化子带间电致发光
ETH Zurich, Institute for Quantum Electronics, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland;
ETH Zurich, Institute for Quantum Electronics, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland;
ETH Zurich, Institute for Quantum Electronics, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland,CNR, Istituto Nanoscienze, Piazza dei Cavalieri 12, Pisa, Italy;
ETH Zurich, Institute for Quantum Electronics, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland;
ETH Zurich, Institute for Quantum Electronics, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland;
Electron Microscopy ETH Zurich (EMEZ), ETH Zurich, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland;
ETH Zurich, Institute for Quantum Electronics, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland;
机译:InAs / AlInAs量子破折号的室温横向电极化子带间电致发光
机译:基于n-InAs矩阵中InSb量子散列的II型断裂间隙异质结构中的高温界面电致发光
机译:InAs / InP量子破折号的中红外电致发光
机译:基于InAs / AlInAs量子破折号的量子级联结构的横向电极化子带间电致发光
机译:半导体量子线和虚线的光学特性。
机译:CdSe胶体量子阱中的偏振近红外子带间吸收
机译:室温横向电极化的子带间 来自Inas / alInas量子破折号的电致发光