Midinfrared electroluminescence from InAs/InP quantum dashes

摘要

We report midinfrared intraband electroluminescence from quantum cascade structures based on InAs/AlInGaAs quantum dashes grown on InP. The devices show a clear broad emission around 150 meV, which is attributed to an intraband transition between the quantum dashes and the following quantum wells. The emission is not present in a control structure without the dashes. The observed transition is mainly p-polarized and does not depend on the dash orientation. This indicates that the confinement in the dashes is mainly due to their height. Our results are promising for the development of broad-gain quantum cascade lasers based on three-dimensionally confined active regions.