Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors

摘要

This paper investigates the instability of negative bias temperature in the dark and the illumination stresses for the InGaZnO thin film transistors. During the negative bias temperature illumination stress, properties exhibit an obvious negative threshold voltage shift and a significant degradation of subthreshold swing. The photoelectric heat effect that combined the effects of electric field, illumination, and temperature induces the generation of dangling bonds in the interface, resulting in an apparent degradation. It is related to the presence of light energy. Finally, this work also employs the capacitance-voltage measurement and recovery behavior to further clarify the mechanism of degradation behaviors.