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Polariton emission characteristics of a modulation-doped multiquantum-well microcavity diode

机译:调制掺杂多量子阱微腔二极管的极化发射特性

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摘要

The role of polariton-electron scattering on the performance characteristics of an electrically injected GaAs-based quantum well (QW) microcavity diode in the strong coupling regime has been investigated. An electron gas is introduced in the quantum wells by modulation doping with silicon dopants. It is observed that polariton-electron scattering suppresses the relaxation bottleneck in the lower polariton branch. However, it is not adequate to produce a degenerate coherent condensate at k_(||) ~ 0 and coherent emission.
机译:研究了极化电子散射在强耦合状态下对电注入的基于GaAs的量子阱(QW)微腔二极管的性能特性的作用。通过用硅掺杂剂进行调制掺杂,将电子气引入量子阱中。观察到,极化子-电子散射抑制了下部极化子分支中的弛豫瓶颈。但是,在k_(||)〜0处产生简并的相干冷凝物并产生相干发射是不够的。

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  • 来源
    《Applied Physics Letters》 |2012年第13期|p.131112.1-131112.4|共4页
  • 作者单位

    Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA;

    Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA;

    Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA;

    Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA;

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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:17:36

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